Direct synthesis of graphene on SiO2 substrates by chemical vapor deposition

Continuous and uniform graphene films were directly grown on SiO 2 substrates using a chemical vapor deposition system with two-temperature zones assembled. The carbon species from the high temperature zone nucleate in the low temperature zone, initiating the growing process of graphene. The films a...

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Bibliographic Details
Published inCrystEngComm Vol. 15; no. 1; pp. 184 - 1844
Main Authors Xu, S. C, Man, B. Y, Jiang, S. Z, Chen, C. S, Yang, C, Liu, M, Gao, X. G, Sun, Z. C, Zhang, C
Format Journal Article
LanguageEnglish
Published 01.01.2013
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Summary:Continuous and uniform graphene films were directly grown on SiO 2 substrates using a chemical vapor deposition system with two-temperature zones assembled. The carbon species from the high temperature zone nucleate in the low temperature zone, initiating the growing process of graphene. The films are predominantly single-layer graphene, with a small percentage of the area having a few layers, whose optical transmittance and electrical conductivity can be comparable with transferred metal-catalyzed graphene. This method avoids the need for either a metal catalyst or a complicated and skilled post growth transfer process and favors the application of graphene as a transparent electrode. Continuous and uniform graphene films were directly grown on SiO 2 substrates using a chemical vapor deposition system with two-temperature zones assembled.
ISSN:1466-8033
1466-8033
DOI:10.1039/c3ce27029g