Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, h...

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Published inChinese physics B Vol. 20; no. 7; pp. 399 - 404
Main Author 王元刚 罗小蓉 葛锐 吴丽娟 陈曦 姚国亮 雷天飞 王琦 范杰 胡夏融
Format Journal Article
LanguageEnglish
Published 01.07.2011
Subjects
Breakdown
Devices
Electric potential
High voltages
LBO
LDMOS
Metal oxide semiconductors
Oxides
SOI
Voltage
击穿电压
埋层
埋氧层
复合
金属氧化物
高压器件
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Summary:A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.
Bibliography:Wang Yuan-Gang, Luo Xiao-Rong, Ge Rui, Wu Li-Juan, Chen Xi, Yao Guo-Liang, Lei Tian-Fei, Wang Qi, Fan Jie , Hu Xia-Rong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.
breakdown voltage, step buried oxide, compound buried layer, self-heating effect
11-5639/O4
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/7/077304