Electronic structure of superconducting InN

We report on an investigation of superconductivity in n-type InN. There is an optimum carrier density for the occurrence of the superconductivity. The lowest carrier density is limited by the Mott transition of n e ~ 2 10 17 cm 3 and the highest density is limited by the superconductor to insulator...

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Bibliographic Details
Published inScience and technology of advanced materials Vol. 7; no. sup1; pp. S112 - S116
Main Author Inushima, Takashi
Format Journal Article
LanguageEnglish
Published Taylor & Francis 01.01.2006
Subjects
73.61.Ey
74.25.Fy
InN
Superconductivity
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Summary:We report on an investigation of superconductivity in n-type InN. There is an optimum carrier density for the occurrence of the superconductivity. The lowest carrier density is limited by the Mott transition of n e ~ 2 10 17 cm 3 and the highest density is limited by the superconductor to insulator transition of n e ~ 5 10 20 cm 3 . We propose a mechanism where the occurrence of the superconductivity is related to the presence of In-In chains of finite length in the ab plane. The In-In chains, which originate from the inversion domains of InN grown on sapphire (0 0 0 1) and elongate along , are coupled toform micro Josephson-junctions.
ISSN:1468-6996
1878-5514
DOI:10.1016/j.stam.2006.06.004