Recent advances of interface engineering in inverted perovskite solar cells

• Published in: Chinese physics B Vol. 31; no. 10; pp. 107307 - 69
• Main Authors: Yu, Shiqi, Xiong, Zhuang, Wang, Zhenhan, Zhou, Haitao, Ma, Fei, Qu, Zihan, Zhao, Yang, Chu, Xinbo, You, Jingbi
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.09.2022; Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
• Subjects: charge transport layer; defect passivation; interface modification; inverted perovskite solar cells; charge transport layer; interface modification; inverted perovskite solar cells; defect passivation
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ac8e9f

Perovskite solar cells (PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n–i–p structure of PSCs with ultra-high efficiency. While the n–i–p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMeTAD, which affect the long-term stability. The inverted device with the p–i–n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs.