Coulomb blockade in strained-Si nanowires on leaky virtual substrates

• Published in: Semiconductor science and technology Vol. 16; no. 2; pp. 72 - 76
• Main Authors: Kanjanachuchai, S, Thornton, T J, Fernández, J M, Ahmed, H
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.02.2001; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Quantum wires; Ge-Si alloys; Tunnel effect; Hall effect; Modulation doping; Nanostructures; Leakage currents; Experimental study; Coulomb interaction; Silicon; Magnetoresistance; IV characteristic; Island structure; Heterostructures