Coulomb blockade in strained-Si nanowires on leaky virtual substrates

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Bibliographic Details
Published inSemiconductor science and technology Vol. 16; no. 2; pp. 72 - 76
Main Authors Kanjanachuchai, S, Thornton, T J, Fernández, J M, Ahmed, H
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2001
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Quantum wires
Ge-Si alloys
Tunnel effect
Hall effect
Modulation doping
Nanostructures
Leakage currents
Experimental study
Coulomb interaction
Silicon
Magnetoresistance
IV characteristic
Island structure
Heterostructures
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/16/2/303