Graphdiyne for multilevel flexible organic resistive random access memory devices

Graphdiyne (GD), a new carbon allotrope with a 2D structure comprising benzene rings and carbon-carbon triple bonds, is employed in fabricating resistive random access memory (RRAM) devices. On inserting a GD nanoparticle (NP) discontinuous layer and thermally depositing an Al-Al 2 O 3 core-shell (A...

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Published inMaterials chemistry frontiers Vol. 1; no. 7; pp. 1338 - 1341
Main Authors Jin, Zhiwen, Chen, Yanhuan, Zhou, Qing, Mao, Peng, Liu, Huibiao, Wang, Jizheng, Li, Yuliang
Format Journal Article
LanguageEnglish
Published 01.07.2017
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Summary:Graphdiyne (GD), a new carbon allotrope with a 2D structure comprising benzene rings and carbon-carbon triple bonds, is employed in fabricating resistive random access memory (RRAM) devices. On inserting a GD nanoparticle (NP) discontinuous layer and thermally depositing an Al-Al 2 O 3 core-shell (Al-Al 2 O 3 ) NP discontinuous layer in insulating polyimide (PI) films on a PET substrate, the designed flexible three-state memory device is realized (PET/Ag/PI/GD/PI/Al-Al 2 O 3 /PI/Al). GD NPs and Al-Al 2 O 3 NPs function as two types of strong electron traps with different energy levels, resulting in two ON states. The OFF state and the two ON states possess long retention times of more than 10 4 s. Our results here demonstrate that GD could have great potential applications in future information storage technologies. A novel carbon material graphdiyne and thermally deposited Al-Al 2 O 3 core-shell NPs were employed to realize flexible multilevel RRAM.
ISSN:2052-1537
2052-1537
DOI:10.1039/c7qm00009j