Investigation and Effects of Wafer Bow in 3D Integration Bonding Schemes

This paper investigates and reviews the effects of wafer bow in three- dimensional (3D) integration bonding schemes, including copper wafer bonding and oxide fusion wafer bonding with silicon on insulator (SOI)-based layer transfer technology. Wafer bow criteria for good bonding quality and fabricat...

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Bibliographic Details
Published inJournal of electronic materials Vol. 39; no. 12; pp. 2605 - 2610
Main Authors Chen, K. N., Zhu, Y., Wu, W. W., Reif, R.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Boston Springer US 01.12.2010
Springer
Springer Nature B.V
Subjects
3-D technology
Applied sciences
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics
Electronics and Microelectronics
Exact sciences and technology
Instrumentation
Interfacial bonding
Materials
Materials Science
Microelectronic fabrication (materials and surfaces technology)
Optical and Electronic Materials
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid State Physics
Wafer bow
wafer bonding
3D integration
Wafer bonding
Silicon on insulator technology
Microelectronic fabrication
Bond order wave
Review
Copper oxide
Wafer
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Summary:This paper investigates and reviews the effects of wafer bow in three- dimensional (3D) integration bonding schemes, including copper wafer bonding and oxide fusion wafer bonding with silicon on insulator (SOI)-based layer transfer technology. Wafer bow criteria for good bonding quality and fabrication techniques to minimize wafer bow are introduced for 3D integration technology and applications.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-010-1341-y