Characterization of interfaces in mosaic CVD diamond crystal

• Published in: Journal of crystal growth Vol. 442; pp. 62 - 67
• Main Authors: Muchnikov, Anatoly B., Radishev, Dmitry B., Vikharev, Anatoly L., Gorbachev, Alexei M., Mitenkin, Anatoly V., Drozdov, Mikhail N., Drozdov, Yuri N., Yunin, Pavel A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.05.2016
• Subjects: A2. Homoepitaxial growth; Accretion; Crystals; Diamonds; Misorientation; Mosaic diamond; Mosaics; Orientation; PACVD; SIMS; Single crystal diamond; Single crystals; Substrates; Mosaic diamond; SIMS; PACVD; Single crystal diamond; A2. Homoepitaxial growth
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2016.02.026

Detailed description of a way to accrete diamond single crystals in one plate using the CVD method is presented. It was found that each region of the mosaic CVD diamond crystal grown over a certain seed substrate “inherits” the crystallographic orientation of its substrate. No correlation was found between the value of misorientation of the accreted crystals and entrance of hydrogen to the boundary. It is shown that successful accretion of single crystal diamond plates in a single mosaic crystal occurs even in the case of great misorientation of crystals. The mechanical stresses appear during the fabrication of the mosaic CVD diamond crystal. Stresses accumulate during accretion of the regions, which grow over substrates with different orientations, in a common structure. •Accretion of single crystal diamond plates in a mosaic crystal occurs even in the case of great misorientation.•No correlation was found between the misorientation angle of the accreted crystals and H in the boundary.•The mechanical stresses appear during the fabrication of the mosaic CVD diamond crystal.•A major part of the stresses could be released during thermochemical polishing.