The electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then...

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Published inChinese physics B Vol. 21; no. 4; pp. 458 - 460
Main Author 邓金祥 秦扬 孔乐 杨学良 李廷 赵卫平 杨萍
Format Journal Article
LanguageEnglish
Published 01.04.2012
Subjects
Annealing
c-BN薄膜
Cubic boron nitride
Deposition
Electrical properties
Implantation
Radio frequencies
Silicon
Sputtering
Thin films
含硫
无线电频率
植入
电性能
离子掺杂
立方氮化硼薄膜
表面电阻率
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Summary:Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.
Bibliography:cubic boron nitride, ion implantation, surface resistivity, activation energy
Deng Jin-Xiang, Qin Yang, Kong Le, Yang Xue-Liang, Li Ting, Zhao Wei-Ping and Vang Ping（College of Applied Sciences, Beijing University of Technology, Beijing 100124, China）
11-5639/O4
Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/4/047202