The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum-well structure
The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum well structure is investigated. By making use of second-order perturbation theory and the classical Boltzmann equation we found, by considering both intrasubband and the intersubband electronic transitions, that the el...
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Published in | Superlattices and microstructures Vol. 29; no. 1; pp. 33 - 42 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
01.01.2001
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum well structure is investigated. By making use of second-order perturbation theory and the classical Boltzmann equation we found, by considering both intrasubband and the intersubband electronic transitions, that the electric field generated by the photon-drag effect in a typical GaAs–AlGaAs two-dimensional system is enhanced by almost one order of magnitude as compared with that of a bulk system. Moreover, the results can qualitatively account for the observed absorption spectra due to intersubband electronic transitions occurring in GaAs quantum wells. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0749-6036 1096-3677 |
DOI: | 10.1006/spmi.2000.0909 |