Electrical properties of PMN–PZT film on silicon lens
A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectri...
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| Published in | Ceramics international Vol. 41; no. 3; pp. 4243 - 4247 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.04.2015
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| Abstract | A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1kHz, a remnant polarization (Pr) of 22μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150pm/V were obtained, indicating that PMN–PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications. |
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| AbstractList | Polycrystalline PMN-PZT films, with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2 micron, were prepared on silicon lenses using the sol-gel method. The films exhibited excellent dielectric, ferroelectric and piezoelectric behaviour. A dielectric constant (epsilonr) of 1756 at 1 kHz, a remanent polarisation (Pr) of 22 microC/cm2 and an effective piezoelectric coefficient (d33,f) of 150 pm/V were obtained, indicating that PMN-PZT films on silicon lenses are promising candidates for tightly focused ultrasound transducer applications. A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1kHz, a remnant polarization (Pr) of 22μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150pm/V were obtained, indicating that PMN–PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications. |
| Author | Ren, Wei Zhu, Benpeng Yan, Xinxin Yang, Xiaofei Ou-Yang, Jun Zhao, Jinyan |
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| CitedBy_id | crossref_primary_10_1063_1_4919387 crossref_primary_10_1016_j_memsci_2019_03_022 crossref_primary_10_1016_j_physleta_2019_126232 crossref_primary_10_1155_2016_9425273 |
| Cites_doi | 10.1063/1.3535608 10.1016/j.jeurceramsoc.2004.07.026 10.1121/1.2216899 10.1016/j.ceramint.2013.05.044 10.1063/1.2713858 10.1143/JJAP.42.5952 10.1063/1.4736731 10.1002/bit.23073 10.1063/1.3206910 10.1002/bit.24735 10.1016/j.jeurceramsoc.2004.03.030 10.1143/JJAP.48.015502 10.1109/58.852073 10.1016/j.ceramint.2013.04.023 |
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| Keywords | Silicon lens PMN–PZT film Ultrahigh frequency ultrasound |
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| Snippet | A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared... Polycrystalline PMN-PZT films, with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2 micron, were prepared on... |
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| SubjectTerms | Ceramics Dielectric constant Electrical properties Lenses Phase boundaries Piezoelectricity PMN–PZT film Silicon Silicon lens Ultrahigh frequency ultrasound Ultrasound |
| Title | Electrical properties of PMN–PZT film on silicon lens |
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