Electrical properties of PMN–PZT film on silicon lens

A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectri...

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Published inCeramics international Vol. 41; no. 3; pp. 4243 - 4247
Main Authors Ou-Yang, Jun, Zhu, Benpeng, Yan, Xinxin, Zhao, Jinyan, Ren, Wei, Yang, Xiaofei
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2015
Subjects
Ceramics
Dielectric constant
Electrical properties
Lenses
Phase boundaries
Piezoelectricity
PMN–PZT film
Silicon
Silicon lens
Ultrahigh frequency ultrasound
Ultrasound
Silicon lens
PMN–PZT film
Ultrahigh frequency ultrasound
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Summary:A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1kHz, a remnant polarization (Pr) of 22μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150pm/V were obtained, indicating that PMN–PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2014.11.090