A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base dopi...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 9; pp. 559 - 563
Main Author 邓永辉 谢刚 汪涛 盛况
Format Journal Article
LanguageEnglish
Published 01.09.2013
Subjects
4H-SiC
Avalanches
Breakdown
Doping
Drift
Electric potential
Gain
Plates (structural members)
RESURF
Semiconductor devices
Voltage
双极性
电流增益
管结构
结型晶体管
雪崩击穿电压
高电压
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/9/097201

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Summary:In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.
Bibliography:Deng Yong-Hui, Xie Gang, Wang Tao, and Sheng Kuang（ College of Electrical Engineering, Zhejiang University. Hangzhou 310007, China）
4H-SiC, lateral bipolar junction transistor （BJT）, high current gain, high breakdown voltage
In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/9/097201