Ferroelectric properties of sol-gel derived Nd-doped SrBi4Ti4O15 thin films

Neodymium-doped strontium bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4-xNdxTi4O15 thin films were systematically studied. The...

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Published inJournal of rare earths Vol. 26; no. 4; pp. 575 - 578
Main Author 范素华 张丰庆 王培吉 任艳霞
Format Journal Article
LanguageEnglish
Published Department of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China%Department of Science, University of Jinan, Jinan 250022, China%Jiyuan Vocational and Technical College, Jiyuan 454650, China 01.08.2008
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Summary:Neodymium-doped strontium bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4-xNdxTi4O15 thin films were systematically studied. The results indicated that the SrBi3.88Nd0.12Ti4O15 (SBNT0.12) thin films had better ferroelectric properties, with a remanent polarization of (2Pr) of 34.3 μC/cm^2 and a coercive field (2Ec) of 220 kV/cm. This could be attributed to the fact that SBNT0.12 ferroelectric thin films consisted of more and larger ball-like grains, approximately 150-200 nm, with structure distortion, which greatly contributed to the improvement of the ferroelectric properties of the films. Furthermore, the film exhibited a good fatigue resistant property. The value of 2Pr after 10^10 switching cycles did not change significantly. The SrBi3.88Nd0.12Ti4O15 films were promising candidates for the application of FeRAMs.
Bibliography:SrBi4-xNdxTi4O15 thin films
11-2788/TF
O6
ferroelectric properties
SrBi4-xNdxTi4O15 thin films; sol-gel method; ferroelectric properties; rare earths
sol-gel method
rare earths
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1002-0721
2509-4963
DOI:10.1016/S1002-0721(08)60140-4