Scaling properties of phase-change line memory

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current~oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consump...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 21; no. 9; pp. 554 - 558
Main Author 杜小锋 宋三年 宋志棠 刘卫丽 吕士龙 顾怡峰 薛维佳 席韡
Format Journal Article
LanguageEnglish
Published 01.09.2012
Subjects
Cross sections
Data storage
Deposition
Masks
Memory devices
Power consumption
Simulation
Three dimensional
Volt-ampere characteristics
三维模拟
内存
功率消耗
变线
存储设备
扩展属性
电气性能
离子束沉积
Online AccessGet full text

Cover

More Information
Summary:Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current~oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
Bibliography:Du Xiao-Feng, Song San-Nian, Song Zhi-Tang, Liu Wei-Li, Lii Shi-Long, Gu Yi-Feng, Xue Wei-Jia, and Xi Wei State Key Laboratory of Fnctional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
phase-change memory, line structure, scaling properties, three-dimensional simulation
11-5639/O4
Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current~oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/9/098401