Role of N in Transition-Metal-Nitrides for Anchoring Platinum-Group Metal Atoms toward Single-Atom Catalysis
Single-atom catalysts (SACs) with a maximum atom utilization efficiency have received growing attention in heterogeneous catalysis. The supporting substrate that provides atomic-dispersed anchoring sites and the local electronic environment in these catalysts is crucial to their activity and stabili...
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Published in | Small methods p. e2200295 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Germany
01.07.2022
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Subjects | |
Online Access | Get more information |
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Summary: | Single-atom catalysts (SACs) with a maximum atom utilization efficiency have received growing attention in heterogeneous catalysis. The supporting substrate that provides atomic-dispersed anchoring sites and the local electronic environment in these catalysts is crucial to their activity and stability. Here, inspired by N-doped graphene substrate, the role of N is explored in transition metal nitrides for anchoring single metal atoms toward single-atom catalysis. A pore-rich metallic vanadium nitride (VN) nanosheet is fabricated as one supporting-substrate example, whose surface features abundant unsaturated N sites with lower binding energy than that of widely used N-doped graphene. Impressively, it is found that this support can anchor nearly all platinum-group single atoms (e.g., platinum, palladium, iridium, and ruthenium), and even be extendable to multiple SACs, i.e., binary (Pt/Pd) and ternary (Pt/Pd/Ir). As a proof-of-concept application for hydrogen production, Pt-based SAC (Pt
-VN) performs excellently, exhibiting a mass activity up to 22.55 A mg
at 0.05 V and a high turnover frequency value close to 0.350 H
s
, superior to commercial platinum/carbon catalyst. The catalyst's durability can be further improved by using binary (Pt
Pd
-VN) SAC. This work provides inexpensive and durable nitride-based support, giving a possible pathway for universally constructing platinum-group SACs. |
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ISSN: | 2366-9608 |
DOI: | 10.1002/smtd.202200295 |