Coherent Control of Stress-Induced InGaAs Quantum Dots by Means of Phonon-Assisted Resonant Photoluminescence

We report the control of coherent status of the lowest energy electronic state of InGaAs/GaAs stress‐induced quantum dots in an inhomogeneously broadened system by time‐integrated detection of narrow Raman‐like lines in resonant photoluminescence spectra. The dephasing time of 18.5 ps has been found...

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Bibliographic Details
Published inphysica status solidi (b) Vol. 224; no. 2; pp. 461 - 464
Main Authors Baranov, A.V., Davydov, V., Fedorov, A.V., Ren, H.-W., Sugou, S., Masumoto, Y.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag Berlin GmbH 01.03.2001
WILEY‐VCH Verlag Berlin GmbH
Subjects
63.20.Kr
78.47.+p
78.67.Hc
S7.12
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Summary:We report the control of coherent status of the lowest energy electronic state of InGaAs/GaAs stress‐induced quantum dots in an inhomogeneously broadened system by time‐integrated detection of narrow Raman‐like lines in resonant photoluminescence spectra. The dephasing time of 18.5 ps has been found at 2K.
Bibliography:istex:147CCA6E7F23A464181CF8AC7F70B372D0154921
ark:/67375/WNG-939C63D8-6
ArticleID:PSSB461
ISSN:0370-1972
1521-3951
DOI:10.1002/1521-3951(200103)224:2<461::AID-PSSB461>3.0.CO;2-V