Metal oxide resistive memory with a deterministic conduction path

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 8; no. 11; pp. 3897 - 393
• Main Authors: Lee, Sunghwan, Seo, Shem, Lim, Jinho, Jeon, Dasom, Alimkhanuly, Batyrbek, Kadyrov, Arman, Lee, Seunghyun
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 21.03.2020
• Subjects: Antimony; Hafnium oxide; Mathematical analysis; Matrix algebra; Matrix methods; Metal oxides; Multiplication; Random access memory; Switching; Tellurium

Resistive random access memories (RRAMs) with minimal power dissipation, high speed, and matrix-vector multiplication capability are potentially ideal for data-centric applications such as neuromorphic computing. However, RRAMs still suffer from instability caused by uncontrolled filament growth and...