Recent advances in the fabrication of graphene-ZnO heterojunctions for optoelectronic device applications
Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest. However, although significant achievements have been made, many chal...
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| Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 6; no. 15; pp. 3815 - 3833 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Cambridge
Royal Society of Chemistry
2018
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| Subjects | |
| Online Access | Get full text |
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| Summary: | Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest. However, although significant achievements have been made, many challenges still exist. In this review paper, we comprehensively summarize the recent advances in the fabrication of various graphene (also including reduced graphene oxide)-ZnO (
e.g.
ZnO films, nanowires, nanotubes, nanorods
etc.
) hybrid heterostructures, and their application in a number of optoelectronic devices, including photodiodes, phototransistors, solar cells, light emitting diodes (LEDs), lasers and so on. We start by briefly surveying the recent progress in the fabrication methodologies such as low-temperature and high-temperature methods. And then, we will elaborate on the optoelectronic device application in terms of device physics, performance analysis, and device optimization approaches. Finally, we close with some unresolved issues and challenges in this field.
Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest. |
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| Bibliography: | Lin-Bao Luo is a full professor of applied physics at Hefei University of Technology. He received his MSc in inorganic chemistry at Department of Chemistry, University of Science and Technology of China, and PhD degree in 2009 from Department of Physics and Materials Sciences, City University of Hong Kong. He joined the Hefei University of Technology in 2011. He has published more than 110 peer reviewed journals with a total citation of ∼3000 and an H-index of 30. His research interest mainly focuses on the controlled fabrication of one-dimensional semiconductor nanostructures for optoelectronic and electronic devices applications including photovoltaic devices, photodetector, and non-volatile memory device. Zhong-jun Li, earned his BS degree from the Department of Physics at Anhui Normal University in 2000. He achieved his PhD degree from Department of Modern Physics, at University of Science and Technology of China in 2008, majoring Atomic & Molecular Physics. After graduation, he then joined the School of Electronic Science & Applied Physics of Hefei University of Technology, and is currently an associate professor. His research interests include the simulation and manipulation of electronic structures of low-dimension semiconductor materials and their applications in devices. Feng-Xia Liang, received her BS degree from Liaocheng University, MS degree from University of Science and Technology of China, and PhD degree from City University of Hong Kong, in 2003, 2006 and 2012, respectively. She is currently an associate professor in the School of Materials Science and Engineering at Hefei University of Technology. Her research interest includes the synthesis of low-dimensional semiconductor nanostructures for chemical, biological and optoelectronic devices applications. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ISSN: | 2050-7526 2050-7534 |
| DOI: | 10.1039/c8tc00172c |