Silicon field emission array as novel charge neutralization device for high current ion implanter

We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, energy spread was narrow enough but unexpected energy...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 237; no. 1-2; pp. 390 - 394
Main Authors Ishikawa, J., Gotoh, Y., Nakamura, K., Kojima, T., Tsuji, H., Ikejiri, T., Sakai, S., Umisedo, S., Nagai, N., Nagao, M., Kanemaru, S.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2005
Subjects
Charge neutralization
Energy distribution
Field emission arrays
Ion implantation
Space charge
Wafer charging
Ion implantation
Charge neutralization
Field emission arrays
Energy distribution
Space charge
81.20.−n
Wafer charging
79.70.+q
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Summary:We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, energy spread was narrow enough but unexpected energy peak shift was observed. To reduce the energy spread and peak shift, a FEA with less number of tips and with narrower gate diameter is necessary. The FEA could be operated about 100h in high vacuum.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.05.033