Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 219; pp. 200 - 205
• Main Authors: Schenkel, T., Rangelow, I.W., Keller, R., Park, S.J., Nilsson, J., Persaud, A., Radmilovic, V.R., Grabiec, P., Schneider, D.H., Liddle, J.A., Bokor, J.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2004
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2004.01.054

In this article we discuss open questions in electronic sputtering of solids by slow, highly charged ions (“potential sputtering”) in the context of their application in a single ion implantation scheme. High yields of secondary electrons emitted when highly charged dopant ions impinge on silicon wafers allow for formation of non-Poissonian implant structures such as single atom arrays. Control of high spatial resolution and implant alignment require the use of nanometer scale apertures. We discuss electronic sputtering issues on mask lifetimes, and damage to silicon wafers.