Defect structure of 4H silicon carbide ingots

• Published in: Journal of crystal growth Vol. 318; no. 1; pp. 394 - 396
• Main Authors: Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2011
• Subjects: A1. Defects; A2. Seed crystals; A3. Physical vapor deposition processes; B1. Silicon carbide; Crystal defects; Crystal growth; Curvature; Inclusions; Ingots; Interface stability; Polytypes; Silicon carbide; A3. Physical vapor deposition processes; B1. Silicon carbide; A2. Seed crystals; A1. Defects

Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been...