Defect structure of 4H silicon carbide ingots

Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 318; no. 1; pp. 394 - 396
Main Authors Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2011
Subjects
A1. Defects
A2. Seed crystals
A3. Physical vapor deposition processes
B1. Silicon carbide
Crystal defects
Crystal growth
Curvature
Inclusions
Ingots
Interface stability
Polytypes
Silicon carbide
A3. Physical vapor deposition processes
B1. Silicon carbide
A2. Seed crystals
A1. Defects
Online AccessGet full text

Cover

More Information
Summary:Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been analyzed. Antiphase domains of the 4H polytype emerging at the top and lateral sides of 15R inclusion form a strictly determined set of binary and ternary joints (extended threading defects). Junctions of a higher order could generate open-core threading superdefects.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.10.166