Surface-enhanced Raman scattering from buffer layer under graphene on SiC in a wide energy range from visible to near-infrared

Raman signals from the buffer layer between graphene and a SiC substrate are enhanced through the formation of nano-structured Au deposited directly on graphene grown on SiC. This simple method makes it possible to deconvolute multiple graphene and buffer layer peaks in a wide energy range from 1.58...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 59; no. 4; pp. 40902 - 40905
Main Authors Sekine, Yoshiaki, Hibino, Hiroki, Oguri, Katsuya, Iwamoto, Atsushi, Nagase, Masao, Kageshima, Hiroyuki, Akazaki, Tatsushi
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.04.2020
Japanese Journal of Applied Physics
Subjects
buffer layer
Buffer layers
Dependence
Graphene
Photovoltaic cells
Raman spectra
Silicon substrates
surface enhanced Raman scattering
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Summary:Raman signals from the buffer layer between graphene and a SiC substrate are enhanced through the formation of nano-structured Au deposited directly on graphene grown on SiC. This simple method makes it possible to deconvolute multiple graphene and buffer layer peaks in a wide energy range from 1.58 to 2.33 eV and find new buffer layer peaks that are not resolved in conventional Raman scattering spectroscopy. Furthermore, we clearly show a small linear excitation energy dependence for one of the buffer layer peak positions and an absence of energy dependence for the peaks at most of the other positions.
Bibliography:JJAP-102231.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab7a48