Radiation effects of 50-MeV protons on PNP bipolar junction transistors

• Published in: Chinese physics B Vol. 31; no. 2; pp. 28502 - 743
• Main Authors: Huang, Yuan-Ting, Cui, Xiu-Hai, Yang, Jian-Qun, Ying, Tao, Yu, Xue-Qiang, Dong, Lei, Li, Wei-Qi, Li, Xing-Ji
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.01.2022; School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China
• Subjects: bipolar junction transistors; electrical properties; radiation defects; synergistic effect; radiation defects; bipolar junction transistors; electrical properties; synergistic effect
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/ac1331

The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.