Extended defects in bulk GaN and III-nitrides grown on this substrate

A short review of the structural perfection of high-pressure grown bulk crystals is given. As-grown undoped and Mg-doped crystals are described. The dependence of defect arrangement and quality of the surface on growth polarity is described. A high perfection of homoepitaxial layers grown on these s...

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Bibliographic Details
Published inJournal of crystal growth Vol. 312; no. 18; pp. 2599 - 2606
Main Author Liliental-Weber, Z.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.2010
Subjects
A1. Line defects
A1. Planar defects
A2. Growth from solution
B1. Nitrides
B2. Semiconducting III-V materials
Crack propagation
Crystal defects
Crystal growth
Crystal structure
Crystals
Dopants
Gallium nitrides
Grain boundaries
Polarity
A2. Growth from solution
B1. Nitrides
A1. Planar defects
B2. Semiconducting III-V materials
A1. Line defects
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Summary:A short review of the structural perfection of high-pressure grown bulk crystals is given. As-grown undoped and Mg-doped crystals are described. The dependence of defect arrangement and quality of the surface on growth polarity is described. A high perfection of homoepitaxial layers grown on these substrates is shown. However, growth of thick layers by HVPE may lead to the formation of differently arranged dislocations and the formation of low angle grain boundaries associated with cracks. It is shown that the introduction of dopant or growth of mismatched layers on undoped high-pressure substrates may lead to the formation of additional defects.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.04.019