Current induced degradation in GaAs HBT's

A physical model for observed current gain degradation in GaAs heterojunction bipolar transistors (HBT's) is suggested in terms of a parameterized mathematical description of accumulating junction damage. The model and measurement suggest a positive correlation between high initial values of DC...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 47; no. 2; pp. 434 - 439
Main Authors Adlerstein, M.G., Gering, J.M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Degradation
Failure
Gain
Gallium arsenide
Gallium arsenides
Gallium compounds
Heterojunction bipolar transistors
Mathematical models
Standard deviation
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Summary:A physical model for observed current gain degradation in GaAs heterojunction bipolar transistors (HBT's) is suggested in terms of a parameterized mathematical description of accumulating junction damage. The model and measurement suggest a positive correlation between high initial values of DC current gain and longer time to failure. Statistical analysis of accelerated stress failure data at 10 kA/cm/sup 2/ for InGaP-GaAs HBT's was conducted. The result shows projected median time to failure (MTTF) of more than 10/sup 8/ h at a junction temperature of 100/spl deg/C. The standard deviation is 0.6 and the activation energy is 1.5 eV.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0018-9383
1557-9646
DOI:10.1109/16.822291