Zinc and tellurium doping in GaAs and AlxGa1-xAs grown by MOCVD

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Bibliographic Details
Published inJournal of crystal growth Vol. 113; no. 1-2; pp. 103 - 112
Main Authors SUN, S. Z, ARMOUR, E. A, ZHENG, K, SCHAUS, C. F
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.08.1991
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Crystal growth
Temperature
Semiconductor materials
Impurity density
Epitaxy
Doping
Aluminium Gallium Arsenides Mixed
Experimental study
Solid solution
Tellurium
Zinc
Inorganic compound
Thin film
Gallium Arsenides
Chemical composition
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More Information
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90014-v