Effects of interfacial states on the capacitance-voltage characteristics of Pd/SiO2/n-Si Schottky diodes

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Bibliographic Details
Published inSolid-state electronics Vol. 30; no. 10; pp. 1005 - 1012
Main Authors BAGNOLI, P. E, NANNINI, A
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Science 01.10.1987
Subjects
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sicily
Diode
Hydrogen
Europe
Interface electron state
MIS structure
Italy
Palladium
Silicon
Nitrogen
Schottky barrier diode
Voltage capacity curve
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ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(87)90091-8