Improvement of crystal quality in ammonothermal growth of bulk GaN

Several key improvements in crystal quality of bulk GaN grown by the ammonothermal method are presented. Full width at half maximum of (0 0 2) X-ray rocking curve was reduced to 53 and 62 arcsec for Ga-side and N-side, respectively. Transparent bulk GaN crystal was also demonstrated. Oxygen and sodi...

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Published inJournal of crystal growth Vol. 312; no. 18; pp. 2503 - 2506
Main Authors Hashimoto, Tadao, Letts, Edward, Ikari, Masanori, Nojima, Yoshihiro
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.2010
Subjects
A2. Growth from solutions
A2. Single crystal growth
B1. Nitrides
B1. Semiconducting gallium compounds
Crystal growth
Crystals
Feasibility
Gallium nitrides
Searching
Slicing
Sodium
Wafers
X-rays
A2. Growth from solutions
B1. Nitrides
A2. Single crystal growth
B1. Semiconducting gallium compounds
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Summary:Several key improvements in crystal quality of bulk GaN grown by the ammonothermal method are presented. Full width at half maximum of (0 0 2) X-ray rocking curve was reduced to 53 and 62 arcsec for Ga-side and N-side, respectively. Transparent bulk GaN crystal was also demonstrated. Oxygen and sodium concentrations were reduced to mid-10 18 and mid-10 15 cm −3, respectively. We are currently searching for a growth condition that produces transparent bulk GaN with high structural quality and low impurities. Small-sized, semi-transparent GaN wafers were fabricated by slicing the grown bulk GaN crystals, which demonstrate the high feasibility of ammonothermal growth for production of GaN wafers.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.04.002