Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropi...

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Bibliographic Details
Published inOptical materials express Vol. 7; no. 12; p. 4408
Main Authors O’Callaghan, J., Loi, R., Mura, E. E., Roycroft, B., Trindade, A. J., Thomas, K., Gocalinska, A., Pelucchi, E., Zhang, J., Roelkens, G., Bower, C. A., Corbett, B.
Format Journal Article
LanguageEnglish
Published Washington Optical Society of America 01.12.2017
Subjects
Ferric chloride
Flat surfaces
Indium aluminum arsenides
Indium phosphides
Iron chlorides
Silicon substrates
Surface roughness
Transfer printing
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Summary:Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.7.004408