Normally-off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors

Nearly normally‐off operation of the GaN‐based heterojunction field effect transistors was obtained using AlGaN/GaN/AlGaN double heterojunction channel. The aluminum compositions of the AlGaN heterobarriers are designed so as to deplete the electron carrier in the AlGaN/GaN/AlGaN channel, which give...

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Published inPhysica status solidi. C Vol. 4; no. 7; pp. 2674 - 2677
Main Authors Shimizu, Mitsuaki, Inada, Masaki, Yagi, Shuichi, Piao, Guanxi, Okumura, Hajime, Arai, Kazuo, Yano, Yoshiki, Akutsu, Nakao
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.06.2007
WILEY‐VCH Verlag
Subjects
73.40.Kp
73.61.Ey
84.30.Jc
84.32.Dd
85.30.Tv
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Summary:Nearly normally‐off operation of the GaN‐based heterojunction field effect transistors was obtained using AlGaN/GaN/AlGaN double heterojunction channel. The aluminum compositions of the AlGaN heterobarriers are designed so as to deplete the electron carrier in the AlGaN/GaN/AlGaN channel, which gives the threshold gate voltage of about 0 V. The maximum drain current density was over 170 mA/mm. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:istex:4B88CD7FA779A0B066A5F10B869FB09185B27715
ArticleID:PSSC200674737
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SourceType-Scholarly Journals-1
ObjectType-Feature-1
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SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200674737