Epitaxial growth and magnetic properties of Fe films on Si substrates

Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrate...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 30; no. 6; pp. 4836 - 4838
Main Authors Yaegashi, S., Kurihara, T., Sato, K., Segawa, H.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1994
Subjects
Anisotropic magnetoresistance
Epitaxial growth
Iron
Magnetic anisotropy
Magnetic films
Magnetic properties
Perpendicular magnetic anisotropy
Semiconductor films
Sputtering
Substrates
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Summary:Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should be considered with magnetocrystalline anisotropy.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/20.334238