A Comparison Between Single-Phase Quasi- Z-Source and Quasi-Switched Boost Inverters

• Published in: IEEE transactions on industrial electronics (1982) Vol. 62; no. 10; pp. 6336 - 6344
• Main Authors: Nguyen, Minh-Khai, Lim, Young-Cheol, Park, Sung-Jun
• Format: Journal Article
• Language: English
• Published: IEEE 01.10.2015
• Subjects: boost inversion ability; Capacitance; Capacitors; Circuit design; Digital signal processing; Diodes; Electric potential; Inductance; Inductors; Inverters; quasi-switched boost inverter; Quasi-Z-source inverter; Ripples; shoot-through state; Stress; Stresses; Switches; Topology; quasi-switched boost inverter (qSBI); Boost inversion ability; shoot-through state; quasi- Z-source inverter (qZSI)
• ISSN: 0278-0046; 1557-9948
• DOI: 10.1109/TIE.2015.2424201

The properties of a single-phase quasi Z-source inverter (qZSI) and a single-phase quasi-switched boost inverter (qSBI), both of which are single-stage buck-boost inverters, are investigated and compared. For the same operating conditions, qSBI has the following advantages over qZSI: 1) Three capacitors are saved; 2) the current rating on both of its switches and diodes is lower; 3) its boost factor is higher with an equivalent parasitic effect; and 4) its efficiency is higher. However, qSBI has one more active switch and one more diode than Z-source/ qZSIs. In addition, the capacitor voltage stress of qSBI is higher than that of qZSI. The dc and ac component circuit analysis, impedance design with low-frequency and high-frequency ripples, component stresses, and power loss calculation are presented. A prototype based on a TMS320F28335 DSP is built in order to compare the operating principle of qSBI and qZSI.