Theory of n-inversion layers in narrow gap semiconductors: the role of the boundary conditions
Saved in:
Published in | Semiconductor science and technology Vol. 5; no. 2; pp. 183 - 190 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.02.1990
Institute of Physics |
Subjects | |
Online Access | Get full text |
Cover
Loading…
ISSN: | 0268-1242 1361-6641 |
---|---|
DOI: | 10.1088/0268-1242/5/2/008 |