Gain and threshold characteristics of strain-compensated multiple-quantum-well lasers

Strain-compensated multiple-quantum-well (MQW) lasers with an operating wavelength near 1.5 mu m have been grown by low-pressure OMVPE. A simple growth method was used to achieve zero net strain structures having InGaAs wells with 1.1% compressive strain and InGaAsP barriers with compensating tensio...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 4; no. 5; pp. 423 - 425
Main Authors Briggs, A.T.R., Greene, P.D., Jowett, J.M.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1992
Subjects
Capacitive sensors
Current measurement
Density measurement
Indium gallium arsenide
Length measurement
Optical waveguides
Quantum well devices
Quantum well lasers
Threshold current
Waveguide lasers
Online AccessGet full text

Cover

More Information
Summary:Strain-compensated multiple-quantum-well (MQW) lasers with an operating wavelength near 1.5 mu m have been grown by low-pressure OMVPE. A simple growth method was used to achieve zero net strain structures having InGaAs wells with 1.1% compressive strain and InGaAsP barriers with compensating tension. Broad stripe laser structures with three, six, and nine wells were characterized and the gain coefficient per well is shown to be related to the logarithm of the current density per well. A threshold current density of 451 A/cm/sup -2/ was obtained for a structure with three wells, uncoated facets, and a cavity length of 2 mm.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.136473