Ballistic transport in single-layer MoS2 piezotronic transistors

Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean fr...

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Bibliographic Details
Published inNano research Vol. 9; no. 2; pp. 282 - 290
Main Authors Huang, Xin, Liu, Wei, Zhang, Aihua, Zhang, Yan, Wang, Zhonglin
Format Journal Article
LanguageEnglish
Published Beijing Tsinghua University Press 01.02.2016
Springer Nature B.V
Subjects
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Charge transport
Chemistry and Materials Science
Computer simulation
Condensed Matter Physics
Materials Science
Mathematical models
Molybdenum disulfide
MoS2
Nanotechnology
Nanotechnology devices
Piezoelectricity
Research Artice
Semiconductor devices
Transistors
Two dimensional analysis
Wurtzite
二硫化钼
单层
压电性能
平均自由程
弹道输运
晶体管
电荷传输
numerical calculation
two-dimensional (2D) MoS
piezotronic transistor
ballistic transport
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Summary:Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers （such as a single atomic layer of MoS2）, ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional （2D） MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
Bibliography:Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers （such as a single atomic layer of MoS2）, ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional （2D） MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
11-5974/O4
piezotronic transistor,two-dimensional （2D） MoS2,ballistic transport,numerical calculation
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-015-0908-6