Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications
We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si 3N 4, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivitie...
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Published in | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 444; no. 1; pp. 419 - 422 |
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Main Authors | , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Elsevier B.V
2000
Elsevier |
Online Access | Get full text |
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Summary: | We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si
3N
4, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100×400
μm
2) and are 100
nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques. |
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ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/S0168-9002(99)01414-X |