Geometry dependent photoconductivity of In2S3 kinks synthesized by kinetically controlled thermal deposition

High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap in...

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Bibliographic Details
Published inNano research Vol. 9; no. 12; pp. 3848 - 3857
Main Authors Xiong, Xing, Zhang, Qi, Gan, Lin, Zhou, Xing, Xing, Xiaonan, Li, Huiqiao, Zhai, Tianyou
Format Journal Article
LanguageEnglish
Published Beijing Tsinghua University Press 01.12.2016
Springer Nature B.V
Subjects
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Cathodoluminescence
Chemistry and Materials Science
Condensed Matter Physics
Deposition
Emission analysis
Kink resistance
Low temperature
Materials Science
Nanotechnology
Nanowires
Optoelectronics
Photoconductivity
Research Article
Stability
Surface roughness
Synthesis
光电导
光电特性
几何相
动力学控制
合成
扭结
热沉积
表面粗糙度
photodetection
S
In
kinks
geometry dependence
thermal deposition
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Summary:High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.
Bibliography:11-5974/O4
geometry dependence;photodetection;In2S3 kinks;thermal deposition
High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-016-1254-z