A six-junction GaAs laser power converter with different sizes of active aperture

We investigate a novel Ga As-based laser power converters（LPCs） grown by metal-organic chemical vapor deposition（MOCVD）,which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4...

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Published inOptoelectronics letters Vol. 13; no. 1; pp. 21 - 24
Main Author 孙玉润 董建荣 何洋 赵勇明 于淑珍 薛济萍 薛驰 王瑾 陆云清 丁彦文
Format Journal Article
LanguageEnglish
Published Tianjin Tianjin University of Technology 2017
Springer Nature B.V
Subjects
Apertures
Electrical junctions
Energy conversion efficiency
Gallium arsenide lasers
Lasers
Maximum power
Metalorganic chemical vapor deposition
Open circuit voltage
Optical Devices
Optics
Organic chemicals
Organic chemistry
Photonics
Physics
Physics and Astronomy
Power converters
Tunnel junctions
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Summary:We investigate a novel Ga As-based laser power converters（LPCs） grown by metal-organic chemical vapor deposition（MOCVD）,which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser,two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W,and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux,and the 4 mm sample shows a higher laser power tolerance.
Bibliography:We investigate a novel Ga As-based laser power converters（LPCs） grown by metal-organic chemical vapor deposition（MOCVD）,which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser,two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W,and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux,and the 4 mm sample shows a higher laser power tolerance.
aperture junction illumination converter diameters MOCVD sizes etching connected photovoltaic
12-1370/TN
SUN Yu-run 1, DONG Jian-rong1, HE Yang1,2, ZHAO Yong-ming 1,2, YU Shu-zhen 1, XUE Ji-ping 3, XUE Chi3, WANG Jin 4, LU Yun-qing4, DING Yan-wen4（ 1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Teeh and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 2. University of Chinese Academy of Sciences, Beijing 100049, China 3. Zhongtian Technology Group Co. Ltd, Nantong 226009, China 4. School of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-016-6193-8