Three-mode multiplexed device based on tilted- branch bus structure using silicon waveguide

•Having low inserting loss and crosstalk, which are smaller than 1.45 dB and –16 dB respectively.•Having a simple structure which can be easily to be masked during manufacturing process.•Having small footprint (8 μm × 950 μm), which is far less complex and more compact than many other published desi...

Full description

Saved in:
Bibliographic Details
Published inPhotonics and nanostructures Vol. 35; p. 100709
Main Authors Tran, Tuan Anh, Nguyen, Hang Duy Thi, Truong, Cao Dung, Nguyen, Hung Tan, Vu, Yem Van, Tran, Duc Han
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.2019
Elsevier Science Ltd
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:•Having low inserting loss and crosstalk, which are smaller than 1.45 dB and –16 dB respectively.•Having a simple structure which can be easily to be masked during manufacturing process.•Having small footprint (8 μm × 950 μm), which is far less complex and more compact than many other published designs.•Having good range of fabrication tolerance and supporting wide band while maintaining desired optical performance.•Can be easily developed further with the same structure for more modes (de)multiplexing if need. We propose a new design of a silicon chip for (de)multiplexing three optical modes based on a tilted-branch bus structure using silicon waveguide. Input lights at fundamental, first-order, and second-order modes in three-dimensional space are simultaneously demultiplexed and converted to three fundamental modes at three individual output ports. The device is designed and optimized via numerical simulation using three-dimensional beam propagation method (3D-BPM). Successful three-mode demultiplexing can be achieved over 150 nm wavelength band of telecom winodws with insertion loss smaller than 1.45 dB and crosstalk below -16 dB. The proposed device also features with a small footprint (8 μm × 950 μm) and a large fabrication tolerance against chip-size variations while maintaining the desired optical performance.
ISSN:1569-4410
1569-4429
DOI:10.1016/j.photonics.2019.100709