Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

• Published in: Physica status solidi. C Vol. 11; no. 3-4; pp. 817 - 820
• Main Authors: Passow, Thorsten, Kunzer, Michael, Börner, Paul, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.02.2014; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: AlInN; Apertures; Current density; Current distribution; Emittance; GaN; ITO; lateral current injection; Light-emitting diodes; Luminance; resonant-cavity light-emitting diode; Three dimensional; Zirconium dioxide

Resonant‐cavity light‐emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/ZrO2 DBR with circular emitting apertures of diameters ranging from 5 to 200 µm are demonstrated. The current distribution is investigated...