Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

• Published in: Physica status solidi. C Vol. 11; no. 3-4; pp. 817 - 820
• Main Authors: Passow, Thorsten, Kunzer, Michael, Börner, Paul, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.02.2014; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: AlInN; Apertures; Current density; Current distribution; Emittance; GaN; ITO; lateral current injection; Light-emitting diodes; Luminance; resonant-cavity light-emitting diode; Three dimensional; Zirconium dioxide
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201300417

Resonant‐cavity light‐emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/ZrO2 DBR with circular emitting apertures of diameters ranging from 5 to 200 µm are demonstrated. The current distribution is investigated by luminance distribution imaging and three‐dimensional device simulations for different current densities. The current distribution exhibits a maximum in the aperture centre or is homogeneous up to an aperture diameter of 50 µm independent of the current density. A minimum occurs in the aperture centre for larger diameters increasing with increasing diameter and current density. The current distribution improves with larger n‐GaN thickness and higher contact resistance between the transparent In2O3:Sn (ITO) electrode and the p‐GaN contact layer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)