GaN growth on (111)Al substrates by CS-MBE and their chemical lift-off technique

• Published in: Physica status solidi. C Vol. 10; no. 3; pp. 385 - 387
• Main Authors: Honda, Tohru, Hayashi, Masato, Sugiura, Yohei, Takezawa, Itsuki, Yamaguchi, Tomohiro
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.03.2013; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Aluminum; Crystal structure; Epitaxial growth; Gallium nitrides; GaN; MBE; Molecular beam epitaxy; Reflection; RHEED; Solid state physics; Spectra
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201200665

The low‐temperature growth of GaN on (0001) sapphire and (111)Al substrates by compound‐source molecular beam epitaxy (CS‐MBE) with was investigated. Although precise control of the V/III ratio was required for the growth, the near‐bandedge‐emission (NBE)‐dominant photoluminescence spectra of hexagonal GaN layers were observed at RT. The GaN layers were also grown on aluminum substrates with and without nitridation by CS‐MBE. Reflection high‐energy electron diffraction patterns of the layers indicate that the nitridation is effective for GaN growth by CS‐MBE on aluminum substrates. For further improvement of the GaN crystalline quality, the use of epitaxially grown Al layers as the substrates for the growth was proposed. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)