Epitaxial Si, SiGe and Ge on binary and ternary rare earth oxide buffers

• Published in: Physica status solidi. C Vol. 9; no. 10-11; pp. 2031 - 2035
• Main Authors: Dargis, Rytis, Arkun, Erdem F., Roucka, Radek, Smith, Robin, Williams, David, Clark, Andrew, Lebby, Michael
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.10.2012; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Crystal defects; Epitaxial growth; Germanium; Lattices; molecular beam epitaxy; Rare earth oxides; semiconductor on insulator; Semiconductors; Silicon germanides; Silicon substrates
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201200255

Lattice engineering by combining multilayer binary (Gd2O3 and La2O3) and ternary (ErxNd1‐x)2O3 rare earth oxide layers makes possible the accommodation of lattice mismatch between the silicon substrate and the grown semiconductor layer for semiconductor on insulator structures leading to a reduction of defect density. It also opens up the opportunity for stress engineering and the avoidance of the formation of structural defects and mechanical damages caused by different thermal‐mechanical properties of the substrate and the layers. In this work, some results of the development of epitaxial heterostructures with group IV semiconductors (Si, SiGe and Ge) on rare earth oxide buffer layers grown on Si(111) are desribed. Distributed Bragg reflectors designed with only three pairs exhibits 80% reflectivity for blue light. On ternary erbium neodymium oxide, SiGe layer grows with a 5x5 reconstructed surface and a roughness of 1.7 nm. We demonstrate a crack free 1 µm thick epitaxial single crystal Ge layer grown on a pseudomorphic cubic La2O3 layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)