Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogene...

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Published inAIP advances Vol. 11; no. 7; pp. 075025 - 075025-6
Main Authors Bhattacharjee, Jayanta, Ghosh, Sahadeb, Pokhriyal, Preeti, Gangwar, Rashmi, Dutt, Rajeev, Sagdeo, Archna, Tiwari, Pragya, Singh, S. D.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.07.2021
AIP Publishing LLC
Subjects
Alloys
Aluminum
Bowing
Electronic devices
Energy gap
Inhomogeneity
Lattice parameters
Low temperature
Optoelectronic devices
Reflectance
Unit cell
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Summary:A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0055874