THz photoconductivity in a-Si:H

Although the steady‐state secondary photoconductivity in amorphous semiconductors is fairly well understood, photocarrier transport with a subpicosecond time resolution (the THz region in the frequency domain) is still not clear. The frequency response of short‐lived photocarriers in the THz region...

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Bibliographic Details
Published inPhysica Status Solidi. B: Basic Solid State Physics Vol. 250; no. 5; pp. 1004 - 1007
Main Authors Shimakawa, Koichi, Wagner, Tomas, Frumar, Miloslav
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.05.2013
WILEY‐VCH Verlag
Subjects
Amorphous semiconductors
Fluctuation
Frequency domains
hydrogenated amorphous silicon
Inhomogeneity
mesoscopic inhomogeneity
Photoconductivity
Radio frequencies
secondary photoconductivity
Solid state physics
THz conductivity
Transport
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Summary:Although the steady‐state secondary photoconductivity in amorphous semiconductors is fairly well understood, photocarrier transport with a subpicosecond time resolution (the THz region in the frequency domain) is still not clear. The frequency response of short‐lived photocarriers in the THz region is discussed in a‐Si:H here. It is shown that THz‐photoconductivity is highly influenced by the mesoscopic inhomogeneity (10‐nm scale) originating from potential fluctuations. This behavior is basically the same as observed in the radio‐frequency (RF) range.
Bibliography:Ministry of Education, Youth and Sports of the Czech Republic within ECOP
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ark:/67375/WNG-L4MK42D3-9
ArticleID:PSSB201248510
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201248510