Electron Velocity Enhancement in Polarization-doped AlGaN

Three-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of 3-dimensional polarization-doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally by means of nanosecond-pulsed measurements. The measured cu...

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Published inMedžiagotyra Vol. 19; no. 2; pp. 129 - 133
Main Authors ARDARAVIČIUS, Linas, KIPRIJANOVIČ, Oleg, LIBERIS, Juozapas
Format Journal Article
LanguageEnglish
Published Kaunas University of Technology 01.01.2013
Subjects
Aluminum gallium nitrides
Computer simulation
current-voltage dependence
Electron density
electron drift velocity
Gallium nitrides
graded AlGaN/GaN
high electric fields
Nanocomposites
Nanomaterials
Nanostructure
polarization doping
Semiconductors
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Summary:Three-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of 3-dimensional polarization-doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally by means of nanosecond-pulsed measurements. The measured current-voltage dependences were used to determine drift velocity data assuming no change in electron density upon applied electric field. The velocity results are compared with that of GaN and ungraded AlGaN/GaN. Also, the experimental results are compared with those of Monte Carlo simulation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1392-1320
2029-7289
DOI:10.5755/j01.ms.19.2.1797