Polarity dependent implanted p-type dopant activation in GaN

Here we present a direct comparison between the activation of implanted Mg ions in N-polar and Ga-polar substrates to produce p-type GaN via symmetric multicycle rapid thermal annealing (SMRTA). Physical dopant activation was achieved by annealing in moderate nitrogen pressures (3.3 MPa) in conjunct...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 58; no. SC; p. SCCD07
Main Authors Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.06.2019
Japanese Journal of Applied Physics
Subjects
Activation
Annealing
Dopants
Gallium nitrides
Luminescence
Nitrogen
Photoluminescence
Polarity
Substrates
Thermal stability
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Summary:Here we present a direct comparison between the activation of implanted Mg ions in N-polar and Ga-polar substrates to produce p-type GaN via symmetric multicycle rapid thermal annealing (SMRTA). Physical dopant activation was achieved by annealing in moderate nitrogen pressures (3.3 MPa) in conjunction with a bi-layer cap. Photoluminescence shows activation was more readily achieved for N-polar films with measured UV luminescence up to ∼15× as intense as yellow/green luminescence compared to ∼2.4× for Ga-polar films. The greater activation of N-polar material was primarily due to a higher thermal stability compared to Ga-polar films. This demonstration of implanted Mg activation by SMRTA enables a facile route toward next generation vertical devices.
Bibliography:JJAP-s100430
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab1129